INPUTS

Background
Dopant species
Concentration Nb cm–3
Resistivity ρb Ω⋅cm
Excitation
Temperature T K
Specified voltage Vj spec V
Emitter
Dopant species
Profile
Sheet resistance ρsq 117 Ω/sq
 
    Function Npeak zpeak zf
      (cm–3) (μm) (μm)
  1.
   
Radiative    
Auger  
SRH at surface   Sn0 cm/s Sp0 cm/s
  EitEi eV Qf cm–2
SRH in emitter   τn0 μs τp0 μs
      EtEi eV
Spectrum
Wavelength λ nm
Absorption coeff. α 1.77E+6 cm–1
Incident intensity Jinc mA/cm2
Transmission fraction  
Propagation angle θt °
Mobility and band gap models
Mobility model  
Intrinsic band gap   Band gap multiplier
Density of states  
Dopant ionisation  
Carrier statistics  
Band gap narrowing  
Miscellaneous inputs
Definition of zf
Significant figures  
Effective depth of the emitter is defined as first point where either
Condition 1: n0 =  x Nb
Condition 2: n0 =  x Δn(z)

OUTPUTS

  Emitter sheet resistance at equilibrium ρsq 117 Ω/sq  
  Emitter saturation current at 0.550 V J0E 64.5 fA/cm2  
  Emitter collection efficiency at short-circuit IQEE 93.8 %  
Dark outputs 
Emitter saturation current J0E 64.5 fA/cm2
Transparency factor αT 77.2 %
Effective emitter width WE 0.617 μm
Calculated at jn voltage Vj 0.550 V
Breakdown of J0E
Mechanism fA/cm2 %
Radiative 0.02 0.04
Auger 14.63 22.69
SRH at surface 49.80 77.23
SRH in emitter 0.03 0.05
Total 64.48 100.00
At short-circuit At open-circuit At specified voltage
Eff emitter width (μm): 0.617     0.617     0.617  
Junction voltage (V): 4.38E-4     0.701     0.550  
Currents (mA/cm2)
Radiative recomb. 0.00 0.00%   0.01 0.04%   0.00 0.00%
Auger recomb. 0.39 0.96%   8.90 22.25%   0.41 1.03%
SRH recomb. at surface 2.09 5.22%   31.07 77.67%   2.18 5.44%
SRH recomb. in emitter 0.00 0.00%   0.02 0.04%   0.00 0.00%
Collected carriers 37.52 93.81%   0.00 0.00%   37.41 93.53%
Generated in emitter 40.00 100.00%   40.00 100.00%   40.00 100.00%

Y-axis:

X-axis:

Depth

Conditions:

Substitional dopant concs vs depth

Depth = 0.617 μm
Background = 1.00E16 cm-3 Depth = 0.600 μm
Background = 1.00E16 cm-3 Depth = 0.583 μm
Background = 1.00E16 cm-3 Depth = 0.566 μm
Background = 1.00E16 cm-3 Depth = 0.549 μm
Background = 1.00E16 cm-3 Depth = 0.532 μm
Background = 1.00E16 cm-3 Depth = 0.514 μm
Background = 1.00E16 cm-3 Depth = 0.497 μm
Background = 1.00E16 cm-3 Depth = 0.480 μm
Background = 1.00E16 cm-3 Depth = 0.463 μm
Background = 1.00E16 cm-3 Depth = 0.446 μm
Background = 1.00E16 cm-3 Depth = 0.429 μm
Background = 1.00E16 cm-3 Depth = 0.412 μm
Background = 1.00E16 cm-3 Depth = 0.394 μm
Background = 1.00E16 cm-3 Depth = 0.377 μm
Background = 1.00E16 cm-3 Depth = 0.360 μm
Background = 1.00E16 cm-3 Depth = 0.343 μm
Background = 1.00E16 cm-3 Depth = 0.326 μm
Background = 1.00E16 cm-3 Depth = 0.309 μm
Background = 1.00E16 cm-3 Depth = 0.292 μm
Background = 1.00E16 cm-3 Depth = 0.274 μm
Background = 1.00E16 cm-3 Depth = 0.257 μm
Background = 1.00E16 cm-3 Depth = 0.240 μm
Background = 1.00E16 cm-3 Depth = 0.223 μm
Background = 1.00E16 cm-3 Depth = 0.206 μm
Background = 1.00E16 cm-3 Depth = 0.189 μm
Background = 1.00E16 cm-3 Depth = 0.171 μm
Background = 1.00E16 cm-3 Depth = 0.154 μm
Background = 1.00E16 cm-3 Depth = 0.137 μm
Background = 1.00E16 cm-3 Depth = 0.120 μm
Background = 1.00E16 cm-3 Depth = 0.103 μm
Background = 1.00E16 cm-3 Depth = 0.086 μm
Background = 1.00E16 cm-3 Depth = 0.069 μm
Background = 1.00E16 cm-3 Depth = 0.051 μm
Background = 1.00E16 cm-3 Depth = 0.034 μm
Background = 1.00E16 cm-3 Depth = 0.017 μm
Background = 1.00E16 cm-3 Depth = 0.000 μm
Background = 1.00E16 cm-3 Depth = 0.617 μm
Emitter = 1.08E17 cm-3 Depth = 0.600 μm
Emitter = 1.40E17 cm-3 Depth = 0.583 μm
Emitter = 1.80E17 cm-3 Depth = 0.566 μm
Emitter = 2.29E17 cm-3 Depth = 0.549 μm
Emitter = 2.91E17 cm-3 Depth = 0.532 μm
Emitter = 3.67E17 cm-3 Depth = 0.514 μm
Emitter = 4.59E17 cm-3 Depth = 0.497 μm
Emitter = 5.72E17 cm-3 Depth = 0.480 μm
Emitter = 7.09E17 cm-3 Depth = 0.463 μm
Emitter = 8.72E17 cm-3 Depth = 0.446 μm
Emitter = 1.07E18 cm-3 Depth = 0.429 μm
Emitter = 1.30E18 cm-3 Depth = 0.412 μm
Emitter = 1.57E18 cm-3 Depth = 0.394 μm
Emitter = 1.89E18 cm-3 Depth = 0.377 μm
Emitter = 2.26E18 cm-3 Depth = 0.360 μm
Emitter = 2.69E18 cm-3 Depth = 0.343 μm
Emitter = 3.18E18 cm-3 Depth = 0.326 μm
Emitter = 3.74E18 cm-3 Depth = 0.309 μm
Emitter = 4.37E18 cm-3 Depth = 0.292 μm
Emitter = 5.08E18 cm-3 Depth = 0.274 μm
Emitter = 5.88E18 cm-3 Depth = 0.257 μm
Emitter = 6.76E18 cm-3 Depth = 0.240 μm
Emitter = 7.73E18 cm-3 Depth = 0.223 μm
Emitter = 8.80E18 cm-3 Depth = 0.206 μm
Emitter = 9.96E18 cm-3 Depth = 0.189 μm
Emitter = 1.12E19 cm-3 Depth = 0.171 μm
Emitter = 1.26E19 cm-3 Depth = 0.154 μm
Emitter = 1.40E19 cm-3 Depth = 0.137 μm
Emitter = 1.55E19 cm-3 Depth = 0.120 μm
Emitter = 1.71E19 cm-3 Depth = 0.103 μm
Emitter = 1.88E19 cm-3 Depth = 0.086 μm
Emitter = 2.06E19 cm-3 Depth = 0.069 μm
Emitter = 2.24E19 cm-3 Depth = 0.051 μm
Emitter = 2.43E19 cm-3 Depth = 0.034 μm
Emitter = 2.61E19 cm-3 Depth = 0.017 μm
Emitter = 2.81E19 cm-3 Depth = 0.000 μm
Emitter = 3.00E19 cm-3
Temperature Energy

Y-axis:

X-axis:

J0E
vs junction voltage

Temperature Energy

Computation time 0.172 s.

Comments? Bugs? Errors? Compliments?

Welcome to EDNA 2

EDNA 2 calculates the recombination in a heavily doped region of silicon, such as an emitter or a back-surface field.

It determines the emitter saturation current density J0E and the internal quantum efficiency for an arbitrary dopant profile. It can be used to determine an emitter's surface recombination velocity from an experimentally measured J0E.

Disclaimer

Neither PV Lighthouse nor any person related to the compilation of this calculator make any warranty, expressed or implied, or assume any legal liability or responsibility for the accuracy, completeness or usefulness of any information disclosed or rendered by this calculator.

Version 2.5.5, 4-Aug-2015

New in this version is an improved convergence on diffusion profiles that have a rapid change in dopant concentration near the junction.

Import PVL File

 

What the

Errors

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