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Semiconductor material

Temperature K
Active doping limit

Background dopant

Profile dopant

Definition of

Background doping
Concentration cm–3
Thickness μm
Resistivity Ω⋅cm
Profile doping
  Doping function Npeak (cm–3) zpeak (μm) zf (μm)




NB: The calculated sheet resistance simulates an ideal four-point-probe measurement. (See the ''About'' tab).

Defined profile
Sheet resistance 235.58 Ω/sq
Junction depth 0.70 μm

Computation time: 0.000 s.

Comments? Bugs? Errors? Compliments?

Welcome to the sheet resistance calculator

This calculator determines the sheet resistance of an arbitrarily doped semiconductor at equilibrium.

The calculator simulates a four-point probe measurement of a surface doped region, such as an emitter, a back-surface field or a front-surface field of a photovoltaic (PV) solar cell. The user can either generate a dopant profile, or upload a profile from a SIMS, ECV, or spreading-resistance measurement. The calculator then determines the sheet resistance and the junction depth at any temperature.

The assumptions used in the calculations are described on the ''About'' page.


Neither PV Lighthouse nor any person related to the compilation of this calculator make any warranty, expressed or implied, or assume any legal liability or responsibility for the accuracy, completeness or usefulness of any information disclosed or rendered by this calculator.

Version 1.6.2, 24-March-2015

New in this version:

  • A bug was fixed in which the temperature ws always treated as Kelvin, even if Celcius was selected as an option.

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