DOPANT IONISATION CALCULATOR

PVL header texture

INPUTS

Semiconductor
Temperature T K
  Dopant species Substitutional conc.
1. cm–3

Ionisation model  
Intrinsic band gap   BG multiplier  
Density of states  
Carrier statistics  
Band gap narrowing  
Significant figures   Include steady state case

OUTPUTS

Equilibrium
 
Substitutional acceptors NA 1.00E+16    
Ionised acceptors NA 9.93E+15 (99.3%)
 
Effective intrinsic carrier conc. ni eff 1.05E+10    
Electron concentration n 1.11E+4    
Hole concentration p 9.93E+15    
 
  Plot
  against
  in  

Ionisation ratio vs NA for equilibrium

Temperature Energy

Computation time: 0.020 s.

Comments? Bugs? Errors? Compliments?

Welcome to the dopant ionisation calculator

This calculator determines the fraction of dopants that are ionised at a given temperature, dopant concentration and excess carrier concentration in crystalline silicon.

Disclaimer

Neither PV Lighthouse nor any person related to the compilation of this calculator make any warranty, expressed or implied, or assume any legal liability or responsibility for the accuracy, completeness or usefulness of any information disclosed or rendered by this calculator.

Version 1.0.1, 14-May-2014

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