TABLES


Solar cells to display

Conventional (commercial)	PERC (commercial)	n-PASHA (ECN)
HJT (EPFL)	HJT (projected)	PERL (UNSW)
IBC (ANU)



Conventional	PERC	n-PASHA	HJT	HJT	PERL	IBC
commercial	commercial	ECN	EPFL	projected	UNSW	ANU


Input files

One-sun parameters – experimental


Voc (V)	–	–	0.655	0.727	–	0.706	0.703
Jsc (mA/cm²)	–	–	39.5	38.8	–	42.7	42.0
FF	–	–	0.799	0.784	–	0.828	0.827
Eff (%)	–	–	20.7	22.1	–	25.0	24.4
Reference	[]	[]	[XXX]	[Des13]	[]	[Gre10]	[Fra14]

One-sun parameters – simulated


Voc (V)	0.626	0.655	0.656	–	0.743	0.710	0.705
Jsc (mA/cm²)	35.2	39.7	39.5	–	36.4	42.3	42.2
FF	0.798	0.794	0.798	–	0.803	0.826	0.831
Eff (%)	17.6	20.7	20.7	–	21.9	24.8	24.7
Reference	[Fel15]	[Fel15]	[Fel15]	[]	[Fel15]	[Fel15]	[Fel15]

Wafer dimensions


Shape	Square	Square	Square	Square	Square	Square	Square
Length (cm)	15.6	15.6	15.6	2	15.6	2	2
Area (cm²)	243.36	243.36	243.36	4.0000	243.36	4.0000	4.0000
Thickness (μm)	180	180	180	230	150	425	230
Volume (cm³)	4.3805	4.3805	4.3805	0.092000	3.6504	0.17000	0.092000

Cell structure


Contact scheme	FRC	FRC	FRC	FRC	FRC	FRC	IBC
Front contact	N grid	N grid	P grid	P grid	P grid	N grid	None
Rear contact	P coating	P coating	N grid	N coating	N coating	P coating	N & P grids

Front surface


Film 3 (outer film)
Film thickness (nm)	–	–	–	80	70	75	–
Material	–	–	–	ITO	ITO	MgF2	–
Details	–	–	–	Sputtered	Sputtered 2.0e20	Single crystal - e	–
RI reference	–	–	–	[Hol13]	[Hol13]	[Dod84]	–

Film 2
Film thickness (nm)	–	–	–	10	6	34	84
Material	–	–	–	Si	Si	ZnS	SiOx
Details	–	–	–	Amorphous p	Amorphous p	Hexagonal - e	PECVD
RI reference	–	–	–	[Hol12]	[Hol12]	[Pal85h]	[McI14]

Film 1 (inner film)
Film thickness (nm)	80	70	70	5	4	23	73
Material	SiNx	SiNx	SiNx	Si	Si	SiO2	SiNx
Details	PECVD 1.99	PECVD 1.99	PECVD 1.99	Amorphous i	Amorphous i	Thermal	PECVD
RI reference	[Dut12]	[Dut12]	[Dut12]	[Hol12]	[Hol12]	[Pal85e]	[McI14]

Texture
Morphology	SphericalCaps	UprightPyramids	UprightPyramids	UprightPyramids	UprightPyramids	InvertedPyramids	UprightPyramids
Periodicity	Random	Random	Random	Random	Random	Regular	Random
Characteristic angle (°)	60	53	54.3	–	54.3	54.74	53
Texture height (μm)	5	5	5	–	5	7.07	5

Front surface doping


Region 1
Description	N diffusion	N diffusion	P diffusion	–	N diffusion	Light N diffusion	Uniform front
Sheet resistance (Ω/sq)	75	162	68	–	150	195	–
Recomb current (fA/cm²)	201	168	63	–	–	6.1	5
Collection efficiency	0.85	0.95	1	–	1	0.997	1

Region 2
Description	N contact	N contact	P contact	–	N contact	Passivated heavy N diffusion	–
Sheet resistance (Ω/sq)	75	75	68	–	150	13	–
Recomb current (fA/cm²)	204	595	1836	–	–	97	–
Collection efficiency	0.85	0.95	1	–	1	0.997	–

Region 3
Description	–	–	–	–	–	Passivated heavy N diffusion	–
Sheet resistance (Ω/sq)	–	–	–	–	–	13	–
Recomb current (fA/cm²)	–	–	–	–	–	118	–
Collection efficiency	–	–	–	–	–	0.997	–

Bulk


Impurity	B	B	P	P	P	B	P
Dopant conc. (cm⁻³)	7.2E+15	7.2E+15	1.7E+15	1.15E+15	920000000000000	1.5E+16	3.2E+15
Resistivity (Ω∙cm)	2	2	2.7	4	5	1	1.5
τ_n0 (μs)	75	371	1000	–	1000	1200	5000
τ_p0 (μs)	75	3710	1000	–	1000	1200	5000

Rear surface doping


Region 1
Description	P contact	Undiffused	N diffusion	P contact	P contact	Light N diffusion	Undiffused
Sheet resistance (Ω/sq)	30	–	171	–	–	–	–
Recomb current (fA/cm²)	517	13.1	103	–	–	–	19
Collection efficiency	0.7	1	1	–	1	1	1

Region 2
Description	–	P contact	P contact	–	–	P diffusion	P diffusion
Sheet resistance (Ω/sq)	–	61	171	–	–	13.6	195
Recomb current (fA/cm²)	–	795	1101	–	–	130	11
Collection efficiency	–	0.9	1	–	–	0.85	0.997

Region 3
Description	–	–	–	–	–	P contact	P contact
Sheet resistance (Ω/sq)	–	–	–	–	–	–	195
Recomb current (fA/cm²)	–	–	–	–	–	–	1000
Collection efficiency	–	–	–	–	–	1	0.8

Region 4
Description	–	–	–	–	–	–	N diffusion
Sheet resistance (Ω/sq)	–	–	–	–	–	–	13
Recomb current (fA/cm²)	–	–	–	–	–	–	97
Collection efficiency	–	–	–	–	–	–	0.9

Region 5
Description	–	–	–	–	–	–	N contact
Sheet resistance (Ω/sq)	–	–	–	–	–	–	13
Recomb current (fA/cm²)	–	–	–	–	–	–	118
Collection efficiency	–	–	–	–	–	–	0.9

Rear surface


Texture
Morphology	Planar	Planar	UprightPyramids	Planar	UprightPyramids	Planar	Planar
Periodicity	–	–	Random	–	Random	–	–
Characteristic angle (°)	–	–	54.3	–	54.3	–	–
Texture height (μm)	–	–	5	–	5	–	–

Film 1 (inner film)
Film thickness (nm)	–	10	70	5	4	200	84
Material	–	Al2O3	SiNx	Si	Si	SiO2	SiO2
Details	–	PECVD	PECVD 1.99	Amorphous i	Amorphous i	Thermal	Thermal
RI reference	–	[Sai09]	[Dut12]	[Hol12]	[Hol12]	[Pal85e]	[Pal85e]

Film 2
Film thickness (nm)	–	100	–	10	20	10000	130
Material	–	SiNx	–	Si	Si	Ag	Si3N4
Details	–	PECVD 1.99	–	Amorphous n	Amorphous n	Pure	LPCVD
RI reference	–	[Dut12]	–	[Hol12]	[Hol12]	[Pal85a]	[McI14]

Film 3 (outer film)
Film thickness (nm)	–	4000	–	200	70	–	4000
Material	–	Al	–	ITO	ITO	–	Al
Details	–	Pure	–	Sputtered	Sputtered 0.65e20	–	Pure
RI reference	–	[Pal85b]	–	[Hol13]	[Hol13]	–	[Pal85b]

N-type metal


Side	Front	Front	Rear	Rear	Rear	Front	Rear
Layout	Grid	Grid	Grid	Coating	Coating	Grid	Grid

Fingers / coating
Number of fingers	75	91	144	–	–	25	40
Cross sectional profile	PseduoRectangular	PseduoRectangular	PseduoRectangular	–	–	PseduoRectangular	Rectangular
Width (μm)	60	60	100	–	–	20	285
Height (μm)	12	12	30	–	13	10	4
Resistivity (μΩ∙cm)	4.5	4.5	4.7	–	7.2	2.3	2.8
Spec contact res (μΩ∙cm)	2000	2000	3.0	–	3000	3.0	15

Busbars
Number of busbars	3	3	3	–	3	1	1
Cross sectional profile	Rectangular	Rectangular	Rectangular	Rectangular	Rectangular	Rectangular	Rectangular
Width (μm)	1300	1300	1500	–	1500	0.0002	0.0002
Height (μm)	15	15	10	–	13	10	4
Resistivity (μΩ∙cm)	4.5	4.5	3.0	–	7.2	2.3	2.8
Spec contact res (μΩ∙cm)	2000	2000	3.0	–	3000	–	–

P-type metal


Side	Rear	Rear	Front	Front	Front	Rear	Rear
Layout	Coating	Coating	Grid	Grid	Grid	Coating	Grid

Fingers / coating
Number of fingers	–	–	72	–	86	–	39
Cross sectional profile	–	–	PseduoRectangular	Rectangular	PseduoRectangular	–	Rectangular
Width (μm)	–	–	45	–	110	–	135
Height (μm)	30	30	10	–	13	10	4
Resistivity (μΩ∙cm)	35	35	3.0	–	7.2	1.6	2.8
Spec contact res (μΩ∙cm)	5000	5000	3.0	–	3000	1.0	20

Busbars
Number of busbars	3	3	3	–	3	1	1
Cross sectional profile	Rectangular	Rectangular	Rectangular	Rectangular	Rectangular	Rectangular	Rectangular
Width (μm)	1300	1300	1500	–	1500	20000	0.0002
Height (μm)	15	15	10	–	13	10	4
Resistivity (μΩ∙cm)	4.5	4.5	3.0	–	7.2	1.6	2.8
Spec contact res (μΩ∙cm)	2000	2000	3.0	–	3000	1.0	–

Welcome to the solar cell library

This library lists the structural, optical and electrical properties of a variety of solar cell types.

WARNING: This library is under construction. The data it contains has not been double-checked!

Disclaimer

Neither PV Lighthouse nor any person related to the compilation of this library make any warranty, expressed or implied, or assume any legal liability or responsibility for the accuracy, completeness or usefulness of any information disclosed or rendered by this library.

[Dec12]	Antoine Descoeudres, Zachary C Holman, Loris Barraud, Sophie Morel, Stefaan De Wolf, Christophe Ballif, '> 21% efficient silicon heterojunction solar cells on n-and p-type wafers compared', IEEE Journal of Photovoltaics 3 (1), pp. 83-89, 2012.
[Dod84]	Marilyn J. Dodge, 'Refractive properties of magnesium fluoride', Applied Optics 23 (12), pp. 1980, 1984.
[Dut12]	Shubham Duttagupta, Fajun Ma, Bram Hoex, Thomas Mueller and Armin G. Aberle, 'Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling', Energy Procedia 15, pp. 78-83, 2012.
[Fel15]	Fell A, McIntosh KR, Altermatt PP, Janssen GJ, Stangl R, Ho-Baillie A, Steinkemper H, Greulich J, Müller M, Min B, Fong KC, 'Input parameters for the simulation of silicon solar cells in 2014', IEEE Journal of Photovoltaics, 5 (4), pp. 1250-63, 2015.
[Fra14]	E. Franklin, 'Design, fabrication and characterisation of a 24.4% efficient interdigitated back contact solar cell', Progress in Photovoltaics, doi: 10.1002/pip.2556, 2014.
[Gre13]	M.A. Green, K. Emery, Y. Hishikawa, W. Warta, and E.D. Dunlop, 'Solar cell efficiency tables (version 42)', Progress in Photovoltaics 21, pp. 827–837, 2013.
[Hol12]	Zachary C. Holman, Miha Filipič, Antoine Descoeudres, Stefaan De Wolf, Franc Smole, Marko Topič and Christophe Ballif, 'Infrared light management in high-efficiency silicon heterojunction and rear-passivated solar cells', Journal of Applied Physics 113 (1), pp. 013107, 2013.Handbook of Optical Constants of Solids, Vol I, Academic Press, pp. 355–356, 1985.
[McI14]	K..R. McIntosh, T.C. Kho, K.C. Fong, S.C. Baker-Finch, Y. Wan, N. Zin, E.T. Franklin, D. Wang, M.D. Abbott, N.E. Grant, E. Wang, M. Stocks and A.W. Blakers, 'Quantifying the optical losses in back-contact solar cells', IEEE PVSC, pp. 0115-0123, 2014.
[Hol13]	Zachary C. Holman, Antoine Descoeudres, Loris Barraud, Fernando Zicarelli Fernandez, Johannes P. Seif, Stefaan De Wolf and Christophe Ballif, 'Current losses at the front of silicon heterojunction solar cells', IEEE Journal of Photovoltaics 2 (1), pp. 7-15, 2012.
[Pal85a]	E. Palik, Handbook of Optical Constants of Solids, Vol I, Academic Press, pp. 355–356, 1985.
[Pal85b]	E. Palik, Handbook of Optical Constants of Solids, Vol I, Academic Press, pp. 397–400, 1985.
[Pal85e]	E. Palik, Handbook of Optical Constants of Solids, Vol I, Academic Press, p. 759, 1985.
[Pal85h]	E. Palik, Handbook of Optical Constants of Solids, Vol I, Academic Press, p. 617, 1985.
[Sai09]	P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu, 'Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide', Applied Physics Letters, 95 151502, 2009.



Cell Architecture	Quokka input file

Conventional commerical
PERC commerical
n-PASHA ECN
HJT Projected
PERL UNSW
IBC ANU

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Version 1, 26-July-2016