**PC1D Program Development:**

Clugston, D.A. and Basore, P.A., “PC1D Version 5: 32-bit Solar Cell Simulation on Personal Computers,” 26th IEEE Photovoltaic Specialists Conf. (Sept 1997).

Basore, P.A. and Clugston, D.A., “PC1D Version 4 for Windows: From Analysis to Design,” 25th IEEE Photovoltaic Specialists Conf., (May 1996).

Basore, P.A., "PC-1D Version 3: Improved Speed and Convergence," 22nd IEEE Photovoltaic Specialists Conf., (October 1991).

Basore, Rover, and Smith, "PC-1D Version 2: Enhanced Numerical Solar Cell Modeling," 20th IEEE Photovoltaic Specialists Conf., (September 1988).

Rover, Basore, and Thorson, "Solar Cell Modeling on Personal Computers," 18th IEEE Photovoltaic Specialists Conf., Las Vegas (October 1985).

**Physical Models:**

Adachi, J. Appl. Phys. 58, p. 1 (1985). (GaAs, AlGaAs electronic properties)

Arora, Hauser, and Roulston, IEEE Trans. on Electron Devices ED-29(2), p. 292 (February 1982). (Silicon transport properties)

Aspnes, Kelso, Logan, and Bhat, J. Appl. Phys. 60, p. 754 (1986). (GaAs, AlGaAs optical properties)

Aspnes and Studna, Physical Review B 27, p. 985 (1983). (InP, Ge optical properties)

ASTM Standard E891-R4, Annual Book of ASTM Standards (1985) (AM1.5 Direct Spectrum)

ASTM Standard E892-R4, Annual Book of ASTM Standards (1985) (AM1.5 Global Spectrum)

Camassel and Auvergne, Phys. Rev. B 12, p. 3258 (1975). (Ge electronic properties)

Camassel, Auvergne, and Mathieu, J. Appl. Phys. 46, p. 2683 (1975). (GaAs electronic properties)

Del Alamo, Swirhun, and Swanson, Solid-State Electronics 28 (1-2), p. 47 (1985). (Silicon transport and recombination properties)

Fan, Y.H., “Semiconductors and Semimetals”, ed. R.K. Williamson and A.C. Beer, Academic Press (1967), Vol 3, p.409. (III-V free-carrier absorption)

Fonash, J., Solar Cell Device Physics, Academic Press, N.Y.(1981). (Ge electronic properties)

Haas, J. Phys. Chem. Solids 23, p. 821 (1962). (Ge optical properties)

Haug, J. Phys. C: Solid State Phys. 16, p. 4159 (1983). (GaAs, AlGaAs recombination coefficients)

Hurkx, Klaassen, and Knuvers, “A New Recombination Model for Device Simulation Including Tunneling”, IEEE Trans. Electron Devices, ED-39, (Feb. 1992), pp. 331-338. (Field-enhanced recombination).

Karpova and Kalashvikov, Proceedings of the International Conference on the Physics of Semiconductors, p. 880 (1962) (Ge recombination coefficients)

Klausmeier-Brown, Lundstrom, and Melloch, Appl Phys. Lett. 52 (26), p. 2255 (June 1988). (GaAs electronic properties)

McLean, T.P., Progress in Semiconductors, Vol. 5, Heywood, London (1960). (Ge electronic properties)

Morin, Phys. Rev. 94, p. 1525 (1954). (Ge transport properties)

Prince, Phys. Rev. 92, p. 681 (1953). (Ge transport properties)

Rajkanan, Singh, and Shewchun, Solid-State Electronics 22, p. 793 (1979). (Silicon optical properties)

Schlangenotto, Maeder, and Gerlach, “Temperature Dependence of the Radiative Recombination Coefficient in Silicon”, Physica Status Solidi A21, 357-367 (1974). (Silicon recombination)

Schroder, Thomas, and Swartz, “Free Carrier Absorption in Silicon”, IEEE Trans. Electron Devices, ED-25, (Feb. 1978), pp. 254-261. (Si free-carrier absorption)

Sigai, Abrahams, and Blanc, J. Electrochem. Soc 119, p. 952 (1972). (AlGaAs transport properties)

Sproul, Green, and Zhao, Appl. Phys. Lett. 57 (3), p. 255 (July 1990). (Intrinsic concentration in silicon).

Swanson and Swirhun, "Characterization of Majority and Minority Carrier Transport in Heavily Doped Silicon," Sandia National Laboratories contractor report, SAND87-7019 (November 1987). (Silicon transport and recombination properties).

Sze, S., Physics of Semiconductor Devices, 2nd. Ed., J. Wiley and Sons, New York, 1981, p. 850. (Si electronic properties)

Takeshima, J. Appl. Phys. 58, p. 3846 (1985). (AlGaAs recombination coefficients)

Takeshima, Jap. J. Appl. Phys. 22, p. 491 (1983) (InP recombination coefficients)

Thekaekara, Solar Energy Engineering, Ed. by A.A.M. Sayigh, Academic Press, New York, 1977, p. 40. (AM0 Spectrum)

Thurber, Mattis, Liu, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon,” U.S. Department of Commerce National Bureau of Standards, (1981). (Si majority carrier mobilities)

Thurmond, J. Electrochemical Soc. 122, p. 1133 (1975). (Si, GaAs, Ge optical properties)

Turner, Reese, and Pettit, Phys. Rev. A 136, p. 1467 (1964) (InP electronic properties)

Tyler and Woodbury, Phys. Rev. 102, p. 647 (1956). (Ge transport properties)

Vilms and Garrett, Solid State Electron. 15, p. 443 (1972). (GaAs transport properties)

Walukiewicz, et. al., J. Appl. Phys. 51, p. 2659 (1980). (InP transport properties)

Wang, Misiakos, and Neugroschel, IEEE Trans. on Electron Devices ED-37 (5), May 1990, p. 1314. (Silicon minority hole mobility).

Wiley, J., Semiconductors and Semimetals, Vol. 10, Academic Press, N.Y. (1975). (InP, GaAs, AlGaAs transport properties)

Yahia, Wanlass, and Coutts, 20th IEEE Photovoltaic Specialists Conf. (September 1988) (InP recombination coefficients)

**Numerical Method:**

Basore, P.A. "Numerical Modeling of Textured Silicon Solar Cells Using PC-1D," IEEE Trans. on Electron Devices, ED-37 (2), (February 1990).

Basore, P.A., "Essential Elements in the Numerical Modeling of Solar Cells," 4th Photovoltaic Science and Engineering Conf., (February 1989).

Grossman and Hargrove, "Numerical Solution of the Semiconductor Transport Equations with Current Boundary Conditions," IEEE Trans. on Electron Devices ED-30 (9), pp. 1092-1096 (September 1983).

Dongarra, Moler, Bunch, and Stewart, LINPACK User's Guide, SIAM, Philadelphia (1979).

Lundstrom, Schwartz, and Gray, "Transport Equations for the Analysis of Heavily Doped Semiconductor Devices," Solid-State Electronics 24, pp. 195-202.

Lundstrom and Schuelke, "Numerical Analysis of Heterostructure Semiconductor Devices," IEEE Trans. on Electron Devices ED-30 (9), pp. 1151-1158 (September 1983).

Mock, Analysis of Mathematical Models of Semiconductor Devices, Boole Press, Dublin.

Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, New York.

Sutherland and Hauser, "A Computer Analysis of Heterojunction and Graded Composition Solar Cells," IEEE Trans. on Electron Devices ED-24, pp. 363-372 (1972).

Thorson, G.M., "A Solar Cell Simulator for Personal Computers," M.S. Thesis, Iowa State University, Ames, IA, 1985.