Input parameters

Device parameters

These batch parameters specify the device parameters which apply to the entire device (not just individual regions). This includes the front and rear surface charge and reflection properties, and the device area.

Name Meaning Units
Area Area cm2
FrTxAngle Front texture angle degrees
FrTxDepth Front texture depth um
RrTxAngle Rear texture angle degrees
RrTxDepth Rear texture depth um
FrBarrier Height of front surface barrier (positive= bands bend up) eV
FrCharge Front surface charge cm-2
RrBarrier Height of rear surface barrier (positive= bands bend up) eV
RrCharge Rear surface charge cm-2
EmitterR Emitter internal resistance ohms
BaseR Base internal resistance ohms
CollectorR Collector internal resistance ohms
EmitterX Emitter distance from front um
BaseX Base distance from front um
CollectorX Collector distance from front um
Shunt1 Value of 1st shunt element seimens
Shunt2 Value of 2nd shunt element seimens
Shunt3 Value of 3rd shunt element seimens
Shunt4 Value of 4th shunt element seimens
Shunt1Xa Anode position of 1st shunt element um
Shunt1Xc Cathode position of 1st shunt um
Shunt2Xa Anode position of 2nd shunt um
Shunt2Xc Cathode position of 2nd shunt um
Shunt3Xa Anode position of 3rd shunt um
Shunt3Xc Cathode position of 3rd shunt um
Shunt4Xa Anode position of 4th shunt um
Shunt4Xc Cathode position of 4th shunt um
FrRefl Front reflectance (fixed) %
RrRefl Rear reflectance (fixed) %
FrBroadRef Front broadband reflectance %
RrBroadRef Rear broadband reflectance %
FrOutThick Thickness of outer layer (for front broadband) nm
FrMidThick “ front middle layer nm
FrInThick “ front inner layer nm
FrOutIndex Refractive index of front outer layer -
FrMidIndex “ front middle layer -
FrInIndex “ front inner layer -
RrOutThick Thickness of rear outer layer nm
RrMidThick “ rear middle layer nm
RrInThick “ rear inner layer nm
RrOutIndex Refractive index of rear outer layer -
RrMidIndex “ rear middle layer -
RrInIndex “ rear inner layer -
FrIntRefl1 Front:First internal reflection %
FrIntRefl2 Subsequent internal reflection %
RrIntRefl1 Rear: First internal reflection %
RrIntRefl2 Subsequent internal reflection %
FrIntRefl Front internal reflection (all passes) %
RrIntRefl Rear internal reflection (all passes) %

Region parameters

These batch parameters let you define region-specific device parameters.

With these parameters, you must specify a region number (in parentheses) after the name. e.g. BkgndDop(3) gives values for the background doping of region 3. Region 1 is the region closest to the front of the device.

Name Meaning Units
Thickness Thickness of region um
BkgndDop Background doping cm-3
FrDopPeak1 1st Front doping - peak value cm-3
FrDopDpth1 “ - depth factor um
FrDopPos1 “ - peak position um
FrDopPeak2 2nd front diffusion - peak cm-3
FrDopDpth2 “ - depth factor um
FrDopPos2 “ - peak position um
RrDopPeak1 1st rear diffusion -peak cm-3
RrDopDpth1 “ - depth factor um
RrDopPos1 “ - peak position um
RrDopPeak2 2nd rear diffusion - peak cm-3
RrDopDpth2 “ - depth factor um
RrDopPos2 “ - peak position um
BulkTaun Bulk recomb.: electron lifetime us
BulkTaup Bulk recombination: hole lifetime us
BulkTau Bulk recombination, set electron and hole lifetime to the same value us
BulkEt Bulk trap energy level eV
FrSn Front surface electron recombination velocity cm/s
FrSp Front surface hole recombination velocity cm/s
FrEt Front surface trap energy level eV
RrSn Rear surface electron recombination velocity cm/s
RrSp Rear surface hole recombination velocity cm/s
RrEt Rear surface trap energy level eV
FrS Front surface recomb velocity, electrons and holes cm/s
RrS Rear surface recomb velocity, electrons and holes cm/s
Ni200 Intrinsic concentation at 200K  
Ni300 Intrinsic concentation at 300K  
Ni400 Intrinsic concentation at 400K  
BandGap BandGap eV
AbsEd1 1st Direct BandGap (for absorption) eV
AbsEd2 2nd Direct Bandgap eV
AbsEi1 1st Indirect BandGap eV
AbsEi2 2nd Indirect BandGap eV

Excitation parameters

These parameters give you control over the excitation parameters to be used in each individual run in a batch mode. These are the same as the parameters in the dialog boxes which can be accessed from the Excitation menu.

Name Meaning Units
Temp Temperature of device kelvin
BaseResSS Base steady-state resistance ohms
BaseResTR Base transient resistance ohms
BaseVltSS Base steady-state voltage V
BaseVltTR1 Base transient initial voltage V
BaseVltTR2 Base transient final voltage V
CollResSS Collector steady-state resistance ohms
CollResTR Collector transient resistance ohms
CollVltSS Collector steady-state voltage V
CollVltTR1 Collector transient initial voltage V
CollVltTR2 Collector transient final voltage V
PriInsySS Primary source steady-state intensity Wcm-2
PriInsyTR1 Primary source initial transient intensity Wcm-2
PriInsyTR2 Primary source final transient intensity Wcm-2
PriMonoSS Pri: Wavelength - steady state nm
PriMonoTR1 Pri: initial transient wavelength nm
PriMonoTR2 Pri: final transient wavelength nm
PriBlackT Pri: Blackbody temperature kelvin
SecInsySS Secondary source steady-state intensity Wcm-2
SecInsyTR1 Sec: Initial transient intensity Wcm-2
SecInsyTR2 Sec: Final transient intensity Wcm-2
SecMonoSS Sec: Wavelength - steady state nm
SecMonoTR1 Sec: Initial transient wavelength nm
SecMonoTR2 Sec: Final transient wavelength nm
SecBlackT Sec: Blackbody temperature kelvin

Numerical parameters

These parameters give you control over the numerical parameters to be used in each individual run in a batch mode. These are the same as the parameters in the Compute:Numerical... dialog box. They're provided here to make it possible to do batch runs involving simulations with different convergence properties.

Name Meaning Units
ElemSize Element size factor -
ErrorLimit Normalized error limit -
Clamp Normalized potential clamp -